Toshiba Corp. has announced sample availability of an 8-megapixel, 1.12 micrometer, back side illumination (BSI) CMOS image sensor integrating a color noise reduction (CNR) circuit.
In a release, Toshiba noted:
The new 1.12 micrometer image sensor, “T4K35”, integrates both BSI and CNR to achieve a signal to noise ratio (SNR) equal to Toshiba’s existing 1.4 micrometer product. It supports chip and camera module miniaturization and will contribute to the achievement of slimmer smartphones and tablets.
Pixel miniaturization in today’s 1.12 micrometer pixel image sensors has cut light sensitivity and SNR, resulting in poorer image quality. BSI technology alone improves sensitivity but still falls short of the required image quality. Leveraging its powers of innovation and technology expertise, Toshiba has developed a CMOS image sensor that integrates both BSI and CNR, directly addressing the key issues of low light sensitivity and SNR. The new CMOS image sensor provides an approximately 1.5 times higher SNR value than a 1.12 micrometer pixel image sensor without CNR, allowing manufacturers to develop products that deliver high quality imagery, even in low light conditions.
1. Integrated CNR circuit
2. Frame rate of 30fps
ApplicationsCameras for smartphones and tablets
Main specifications Part number T4K35 Resolution 8-megapixels Optical size 1/4 inch Aspect size 4:3 Pixel size 1.12 micrometers Frame rate (full) 30fps Mass production schedule July 2013
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Originally posted 2013-02-06 02:53:05.